| 发明名称 |
METHOD OF FORMING INTEGRATED CIRCUIT HAVING P-N-P AND N-P-N TRANSISTORS HAVING CURRENT FLOWS ISOLATED FROM EACH OTHER AND PERPENDICULAR TO EACH OTHER ON SUBSTRATE MADE OF N-TYPE SEMICONDUCTOR MATERIAL |
| 摘要 |
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| 申请公布号 |
JPH0212926(A) |
申请公布日期 |
1990.01.17 |
| 申请号 |
JP19890106088 |
申请日期 |
1989.04.27 |
| 申请人 |
SGS THOMSON MICROELETTRONICA SPA |
发明人 |
RAFUAERE ZANBURAANO;SARUBATOORE MUSUMECHI |
| 分类号 |
H01L29/73;H01L21/331;H01L21/761;H01L21/8228;H01L27/082;H01L29/732 |
主分类号 |
H01L29/73 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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