| 摘要 |
PURPOSE:To allow the generation of the second harmonic wave of semiconductor laser light by an LiNbO3 material by providing a waveguide layer consisting of LiNbO3 on a single crystal substrate layer consisting of LiTaO3. CONSTITUTION:The laser light having 0.82-0.84mum wavelength is determined as the light source wave of a basic wave. The LiNbO3 crystal waveguide layer 2 having 3.7-9.0mum film thickness is formed on the LiTaO3 single crystal substrate 1 and the incident angle of the laser light on the optical axis (Z axis) of the crystal is set at + or -0-+ or -35 deg.. The most preferable condition of the second harmonic wave generating element is the case in which the film thickness of the LiNbO3 crystal waveguide layer is 3.7-3.8mum and the incident angle of the laser light on the optical axis (Z axis) of the single crystal of the LiTaO3 is 0 deg.+ or -0.5 deg.. The generation of the second harmonic wave of the semiconductor laser light of 0.8mum band by the LiNbO3 is enabled in this way and the wide utilization of the element to optical disk memories and CD players, etc., is possible. |
