SILICON CARBIDE BARRIER BETWEEN SILICON SUBSTRATE AND METAL LAYER,申请号EP19880311912-传众专利搜索

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发明名称	SILICON CARBIDE BARRIER BETWEEN SILICON SUBSTRATE AND METAL LAYER
摘要
申请公布号	EP0322161(A3)	申请公布日期	1990.01.17
申请号	EP19880311912	申请日期	1988.12.16
申请人	FUJITSU LIMITED	发明人	FURUMURA, YUJI;MIENO, FUMITAKE;ESHITA, TAKASHI;ITOH, KIKUO;DOKI, MASAHIKO
分类号	H01L21/205;H01L29/45;H01L29/78;(IPC1-7):H01L29/54;H01L29/24	主分类号	H01L21/205
代理机构		代理人
主权项
地址

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