| 摘要 |
PURPOSE:To increase the traveling speed of two-dimensional electrons or holes formed on a heterojunction boundary and to realize the further enhancing of performance and acceleration of speed by storing the electrons or holes only at a base level between heterojunctions at least with the heterojunction as double heterojunctions. CONSTITUTION:A nondoped GaAs 2 formed with a quantum level is further inserted with undoped AlyGa1-yAs 3 as a double heterostructure in addition to an N-type AlxGa1-xAs 1 and the GaAs 2 in a normal structure, and the thickness of the GaAs 2 and the composition (y) of the AlyGa1-yAs 3 are varied to control the quantum level only to a base level E0. Thus, this hetero field effect transistor is determined at its speed only with the electrons having small scattering probability, lowest traveling speed at base level E0 to be accelerated as compared with a conventional one. |
