| 摘要 |
PURPOSE:To improve the sensitivity, the resolution and the dry-etching resistance of a resist layer due to exposure of a short wavelength ray by composing a resist layer of an alkali-soluble resin and an aliphatic diazoketone as a main component. CONSTITUTION:The resist layer composed of a composition contg. the alkali- soluble resin and the aliphatic diazoketone (A) as the main component is formed on a substrate, and a fine pattern is formed by exposing the resist layer with a UV ray having 180-300nm (for example, a KrF excimer laser beam). The upper layer of a two layers resist is composed of an alkali soluble silicone resin and the composition contg. the component A as the main component. The component A is preferably composed of derivatives such as cholic acid, etc. (for example, a compd. shown by formula I) or a satd. aliphatic polyhydric alcohol (for example, a compd. shown by formula III). In the formula, R1 is hydrogen atom or 1-10C alkyl group, R2 is hydrogen atom, R3 is an org. group, R4 is a residual group except hydroxyl group from polyhydric alcohol, (m) is >=0, (n) is >=1. |
