| 发明名称 |
Method for manufacturing ohmic contacts having low transfer resistances |
| 摘要 |
A method for manufacturing ohmic contacts having low transfer resistances on doped semiconductor material, whereby the doping is implanted self-aligning using mask technique and the metallization is applied and, after removal of the mask layer, a temperature-time cycle occurs for simultaneous annealing the doping and alloying in the metallization.
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| 申请公布号 |
US4894350(A) |
申请公布日期 |
1990.01.16 |
| 申请号 |
US19880248114 |
申请日期 |
1988.09.23 |
| 申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
ZWICKNAGL, HANS P.;TEWS, HELMUT;HAGER, THOMAS H. |
| 分类号 |
H01L29/205;H01L21/027;H01L21/28;H01L21/285;H01L21/331;H01L29/73 |
主分类号 |
H01L29/205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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