| 摘要 |
PURPOSE:To improve the density of elements by extending a word line in the channel longitudinal direction of a transfer FET, and extending a bit line perpendicularly to the word line. CONSTITUTION:After a field insulating film 29 made of silicon dioxide is formed on a P-type silicon substrate 11, arsenic is selectively implanted to form an N<+> type layer 21 is formed by an ion implanting method. Then, a gate oxide film 31 is formed, polysilicon and further tungsten silicide are laminated and deposited by a CVD thereby to form a word line 24 used also as a gate electrode. Thereafter, As is ion implanted to form a source 32 and a drain 25. Subsequently, an SiO2 is formed as an insulating film 30 on a whole surface, patterned, and further reactively ion etched to form a contact hole 39 in the drain. Thereafter, polysilicon is deposited, As is ion implanted to impart conductivity, and a storage electrode 26 is then formed. Successively, after an insulator film 28 is formed on the electrode 26, a polysilicon film is deposited, phosphorus oxychloride is thermally diffused therein to form opposite electrodes 27. |
