| 摘要 |
PURPOSE:To sandwich a field insulating film to prevent punching-through production between neighboring diffusion layers by making the impurity concentration of a part in the neighborhood of contact parts of a semiconductor film for forming gate wiring lower than that of the other part. CONSTITUTION:Contact parts C2, C'2 in which gate wiring G1, G'1 are directly connected to a semiconductor substrate 1 sandwich a field insulating film 2 to near and is formed. The impurity concentration of the part in the neighborhood of contact parts of polycrystalline Si films for forming G1, G'1 is made lower than the other parts. Therefore, the joining depth of diffusion layers formed by impurity diffusion of the polycrystalline Si film to the substrate 1 can be made shallow. Thereby punching-through production between the diffusion layers neared and formed by sandwiching the field insulating film can be prevented and the improvement of integrated density by the use of contacts can be contrived. |
