| 摘要 |
PURPOSE:To improve the dry-etching resistance of a resist by using a specified Si contg. resist for the upper layer of a two layer resist. CONSTITUTION:A polymer substance wrapped a nucleus composed of a SiO2 particle with a photosensitive material by adsorbing the photosensitive material to the nucleus is used for the upper layer of the two layer resist. A metal contg. resist which is used a metal particle (such as a Sn particle) instead of the SiO2 particle, is used for the upper layer resist of the two layer resist. A lower layer film 2 and the upper layer resist 3 prescribed above, are formed on a semiconductor substrate 1 in this order, and electron beams 5 are selectively irradiated on the obtd. substrate, followed by developing the exposed resist to form a resist pattern 4. Subsequently, the fine pattern with the vertical section is exactly formed by subjecting the film 2 to dry-etching using the pattern 4 as a mask. |
