| 摘要 |
PURPOSE: To reduce chip noises at a low temperature and high power supply voltage without substantially reducing high operation speed by obtaining a charge current by a P-channel MOS transistor and controlling the gate of the MOS TR by bias voltage to be conveniently changed in accordance with temperature, power supply voltage and a process. CONSTITUTION: Bias voltage VOB is used for biasing TRs MO1, M06 in a saturated state and controlled currents ICH1, ICH2 are applied to charge the gate capacitors of pull-up and pull-down TRsM05, MO10. First and second CMOS transmission gates act as transient switches so as to charge the corresponding gate capacitors with the controlled currents ICH1, ICH2. A reference generator 44 for applying the bias voltage VOB is designed so as to indicate the characteristics of increased currents when the controlled currents ICH1, ICH2 are increased, temperature is raised, power supply voltage is dropped, channel width is reduced, and channel length is increased. |
