| 摘要 |
PURPOSE:To maintain high photoelectric conversion efficiency while preventing photoelectric conversion characteristics from deteriorating by a method wherein a light reflection layer is provided on the exterior of an electrode on the opposite side of a photoelectric conversion layer via a transparent insulation layer, and light is reflected by the light reflection layer and injected again in the photoelectric conversion element. CONSTITUTION:A plurality of photoelectric conversion elements PD are provided on a rear face of a transparent substrate 1. An element PD has a transparent electrode 3 on a light receiving face of a photoelectric conversion layer 2 and a transparent electrode 4 on its rear face. The conversion layer 2 consists of a first conductive type semiconductor layer 2a, an type-i semiconductor layer 2b, and a second conductive type semiconductor layer 2c. A light reflection layer 6 made of Al of Ag is formed via a transparent insulation layer 5 of an SiO2 film, for example. The reflection layer 6 reflects light which has transmitted through the device PD and injects it in the element PD again. This prevents the element PD characteristics from deteriorating, while maintaining high photoelectric conversion efficiency. |
