发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To increase and decrease dividing resistance ratio by disposing the third electrode at a part of a resistance layer between the first and second electrodes and forming a processed groove in the resistance layer. CONSTITUTION:A processed groove which is provided for the purpose of adjusting the ratio a resistance R1 between electrodes 12 and 14 to a resistance R2 between the electrodes 13 and 14 is formed at a recessed part of a resistance layer 11 through a functional laser trimming process. The initial value of a resistance ratio which is determined before forming the processed groove 3 is one in the resistance layer 11. When the processed groove only for a length W is formed, the resistance ratio varies up to 1.6 at an actual measurement value. Then the resistance value is adjusted by making the length W of the processed groove 3 vary. A resistance which can be trimmed thus makes it possible to increase and decrease the resistance value.</p>
申请公布号 JPH029160(A) 申请公布日期 1990.01.12
申请号 JP19880158174 申请日期 1988.06.28
申请人 TOSHIBA CORP 发明人 IMAMURA KAORU
分类号 H01C17/24;H01L21/822;H01L27/04;H01L27/08 主分类号 H01C17/24
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