发明名称 CIRCUIT FOR DETECTING STATUS OF MATRIX CELL OF MOS-EPROM
摘要 <p>PURPOSE: To detect the condition of a matrix cell without delay by connecting an offset current generating device to a node between a drain of a reference cell and a voltage power source. CONSTITUTION: The voltage power source VCC is applied to the reference cell 10 and the matrix cell 12 via load transistors TR 14 and 16, respectively. Also, nodes VR and VS are connected to two inputs of an operation detecting amplifier 26. And the current generating device 28 is connected between the power source VCC and the node VR i.e., the drain of the reference cell 10, and the offset current LL is applied to the reference cell 10. Therefore, the current flowing through the load of the reference cell is the difference between the current absorbed with the virginal reference cell and the voltage constantly fed from the offset generating device 28. By this way, the purpose is achieved from the relationship of the characteristic curve of the cell.</p>
申请公布号 JPH029095(A) 申请公布日期 1990.01.12
申请号 JP19890019374 申请日期 1989.01.27
申请人 SGS THOMSON MICROELETTRONICA SPA 发明人 JIYOBUANNI KANPARUDO
分类号 G11C17/00;G11C16/06;G11C16/28;H03K19/177 主分类号 G11C17/00
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