| 摘要 |
Particles of silicon and a p or n carrier substance which are in spherical or spheroidal form, and suitable for use in the preparation of doped semiconductor devices, can be prepared by a fluidized bed technique for chemical vapor deposition of a carrier substance (B, P, As or Sb). The prepared products have a kernel (10) of high purity polysilicon and a layer (12) of silicon/dopant alloy upon the kernel. Optionally, the particles have a thin outer layer (14) of silicon. |
