| 摘要 |
<p>PURPOSE:To obviate a semiconductor protective layer and simplify a structure by using an etching solution in which the sum of the densities of nitric acid and hydrogen fluoride is below about 50% and the ratio of the density of nitric acid to hydrogen fluoride is 10 or more. CONSTITUTION:A first metal layer 4 is deposited on a glass substrate 1A. A gate insulation layer 5, a first semiconductor layer 6 in which impurity is scarcely contained, a second semiconductor layer 8B in which phosphorus is contained as a donor are deposited over the entire surface, and a resist pattern in the form of islands is formed and etched by a predetermined etching solution. An opening is formed in the gate insulation layer 5 on the metal layer 4. Transparent conductive layers 11, 13 are deposited, and at the same time, an extraction electrode is formed. Only a second semiconductor layer n<+>-a-Si is etched with this transparent conductive layers 11, 13 as masks. At this time, an etching solution is used in which the sum of the densities of nitric acid and hydrogen fluoride is below about 50% and the ratio of the density of nitric acid to hydrogen fluoride is 10 or more.</p> |
