| 摘要 |
A plasma CVD process for forming silicon nitride-type or silicon dioxide-type films onto a substrate comprising the steps of: (a) introducing di-tert-butylsilane and at least one other reactant gas into a CVD reaction zone containing said substrate on which either a silicon nitride-type or silicon dioxide-type film is to be formed; (b) maintaining the temperature of said zone and said substrate from about 100 DEG C. to about 350 DEG C.; (c) maintaining the pressure in said zone from about 0.1 to about 5 Torr; and (d) passing said gas mixture into contact with said substrate while exciting said gas mixture with a plasma for a period of time sufficient to form a silicon nitride-type or silicon dioxide-type film on said substrate, wherein said plasma is excited by a RF power at about 10 to 500 Watts. |
