| 摘要 |
PURPOSE:To manufacture a sputtering target excellent in bonding strength and having high cooling efficiency by forming an upper layer consisting of dielectric material integrally with a lower layer having holes and also entering the dielectric material of the upper layer into respective holes in the lower layer. CONSTITUTION:An upper layer 1 (e.g., SiO2 is uniformly dispersed into ZnS and and thickness is regulated to about 5mm) is formed integrally with a lower layer 2 (composed, e.g., of Cu) having tapered holes 2a so as to be formed into a sputtering target. At this time, since the dielectric material of the upper layer 1 is entered into the tapered holes 2a in the lower layer 2 in the boundary region 3 between the upper layer 1 and the lower layer 2 and also the size of each hole 2a is regulated so that it is larger on the upper side and smaller in the lower side, firm bonding can be performed. Further, R chamfering treatment 2b is applied to the whole periphery of the small opening of each hole 2a mentioned above to relax the concentration of stress due to expansion and contraction, and the sum of the areas of respective openings of the above holes 2a is regulated to 30-60% based on the area of the lower layer 2. By this method, the bonding strength of the target to a backing plate can be improved, and cooling efficiency can be also improved. |
