发明名称 |
JOSEPHSON-TUNNELELEMENT MI METALLOXIDISCHEM SUPRALEITERMATERIAL UND VERFAHREN ZUR HERSTELLUNG DES ELEMENTS |
摘要 |
A Josephson tunnel element (15) with a sandwich structure on a substrate (2) contains a film (7) which serves as a basis electrode (BE), a film (12) which serves as a counter electrode (GE), and a film (10) which serves as a tunnel barrier sandwiched between said electrode films. The electrode films (7, 12) are each composed of an oxide ceramic superconducting material with a high transition temperature and ordered crystal structure, so that the electrode films (7, 12) have a high critical current density in the direction of the planes (E1, E2) of the films. Both the tunnel barrier film (10) and the substrate (2) have a texture (2a) adapted to the crystal structure dimensions of the superconducting phase of the superconducting material. A Josephson element of this type can be advantageously manufactured by a hole-masking technique by oblique sputtering concurrently with heat treatment and oxygen treatment.
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申请公布号 |
DE3822905(A1) |
申请公布日期 |
1990.01.11 |
申请号 |
DE19883822905 |
申请日期 |
1988.07.06 |
申请人 |
SIEMENS AG, 1000 BERLIN UND 8000 MUENCHEN, DE |
发明人 |
DAALMANS, GABRIEL;ROAS, BERNHARD;HOENIG, ECKHARDT, DR., 8520 ERLANGEN, DE |
分类号 |
C23C14/00;C23C14/04;C23C14/22;C23C14/28;H01L39/22;H01L39/24 |
主分类号 |
C23C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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