| 摘要 |
PURPOSE:To polish a compound semiconductor crystal in a uniform thickness without damaging it by a method wherein a micrometer is fixed to an outer piece having a smooth lower-end face and a circular bore in such a way that its movable tip part protrudes in the circular bore and a smooth lower-end face on a plane identical to the smooth lower-end face of the outer piece and a central piece having an outside diameter fitting the circular bore are fixed to the movable tip part. CONSTITUTION:When a compound semiconductor crystal 18 is situated at a large distance from a polishing plate 20 and is in a positional relationship that a polishing powder 22 does not reach the compound semiconductor crystal 18, the compound semiconductor crystal 18 is not polished. When the compound semiconductor crystal 18 comes into contact with the polishing plate 20, the compound semiconductor 18 is polished; since the compound semiconductor crystal 18 is of low hardness, it is subjected easily to damage such as a strain or the like. Therefore, the compound, semiconductor crystal 18 and the polishing plate 20 are set in such a way that an extremely slight gap exists between them and that this gap is filled with the polishing powder 22. Thereby, the compound semiconductor crystal 18 is not subjected directly to a pressure from the polishing plate, 20; it is subjected to a pressure from the polishing powder 22 which is flowing and moving. The crystal can be polished sufficiently under the pressure of this degree and is hardly subjected to the damage such as the strain or the like.
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