| 摘要 |
PURPOSE: To enable use of silicon area below a bonding pad as an active and passive component, by providing an N-doped epitaxial region and a P-doped region extending in the former region via stacked silicon dioxide and silicon nitride layers, then providing a metal bonding pad thereon, and connecting one of bonding pad cells to the P-doped region by a metal contact. CONSTITUTION: A bonding pad cell 22 is demarcated by a P-doped isolation region 24, and has its surface connected to a P-doped substrate 26 via an N- doped epitaxial region 28. A P-doped region 34 exists below a bonding pad 30. A silicon dioxide layer 36 and a silicon nitride layer 37 isolate the pad 30 from the region 24. In addition, a pair of N<+> -regions 38, 40 are connected to the epitaxial layer 28. By omitting a part of the thin oxide layers 36, 37, or by providing metal connection directly to the P-doped region 34 via apertures 42, 44 of an oxide layer 32, junction capacitance may be formed between the P-doped region 34 and the region 28. |
