发明名称 BREAKING DEVICE OF SEMICONDUCTOR SUBSTRATE
摘要 <p>PURPOSE:To prevent the longitudinal cracking and chipping of a chip from developing and, at the same time, make its separation in shorter direction possible by a method wherein masking tapes, which are applied to a semiconductor substrate, are extended in the tangential direction of an ellipsoidal surface on an ellipsoidal surface stage having curvatures corresponding to the aspect ratio of the chip. CONSTITUTION:The breaking device concerned consists of an ellipsoidal surface stage 1 and a ring 2, to which masking tapes are fixed, and which is arranged in the periphery of the stage 1. In addition, the stage 1 is vertically shiftable relative to the fixing ring 2. An example is given in the case of the separation of element chips, each of which is 1mm in width, 2mm in length and 150mum in thickness and made from a GaAs substrate having a diameter of three inches or the aspect ratio of each of which is 1:2. In this case, the shape of the stage is of an ellipsoidal surface having curvatures corresponding to the aspect ratio of the semiconductor element chip or the ratio of the radii of curvature in the longitudinal section and in the lateral section of the stage is 1:2 and concretely said radii of curvature are 20cm and 10cm. In order to separate into chips by the use of the device, firstly, scribing lines are produced with a diamond needle along the direction of cleavage of the GaAs substrate 3, which has a diameter of three inches and on which semiconductor elements are produced. After that, masking tapes 5 are applied to both the sides of the substrate. The peripheries of the resultant tapes are fixed to the ring 2. Finally, the ellipsoidal surface stage 1 is pushed against the substrate from below in order to separate it into chips 4.</p>
申请公布号 JPH028014(A) 申请公布日期 1990.01.11
申请号 JP19880158045 申请日期 1988.06.28
申请人 TOSHIBA CORP 发明人 KURITA NORIAKI;KAMO HISAO
分类号 B28D5/00;H01L21/68;H01L21/683 主分类号 B28D5/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利