| 摘要 |
<p>PURPOSE:To reduce the number of photo processes by simultaneously performing patterning of a gate electrode and a gate insulation film, a scanning electrode wiring, an electrode at the lower side of a capacitor part, and a leading wire. CONSTITUTION:With a TFT substrate, a polySi film is accumulated on a glass substrate 1 and an element area 10 is obtained by first patterning. Then, an SiO2 film is accumulated over the entire surface, an ITO film is accumulated over the entire surface, and the second patterning is performed using a resist 50 to form a gate insulation film 11, a gate electrode 12, a common electrode 30 of accumulated capacity, a leading wire, and a scanning line electrode 21 simultaneously. Then, phosphor ions are implanted into an active layer 10, which is heated to form a source area 13-1 and a drain area 13-2. Then, an interlayer insulation film 40 is formed by accumulating a PSG film. After that, a contact through hole is opened by the third patterning, Al film is accumulated and a signal line electrode 22 and a drain electrode 23 are formed by the fourth patterning, and finally the ITO is accumulated and an element drive electrode 31 is formed by the fifth patterning.</p> |
