| 摘要 |
PURPOSE: To facilitate the formation of tandem grooves by providing the element with the grooves consisting of a first part having a relatively large cross-section and a second part having a relatively layer cross-section. CONSTITUTION: If a semiconductor is Si, the main face is adequately parallel to a [100] crystal face, the width of the grooves is parallel to a [110] crystal direction. An example of an anisotropic etchant is water and KOH in propanol. The etchant has an extremely low etching rate to the Si [110] face and, therefore, forms the V-grooves having side walls. After the initial etching ends, the second mask layer is removed from the parts of the narrow width of the openings to expose the semiconductor existing below the parts of the narrow width of the openings. The method is capable of forming the tandem grooves by using, for example, the single layer or three level resist without using non- planar lithography. |
