Method and apparatus for manufacturing silicon single crystals.

摘要

A silicon single crystal manufacturing method and apparatus capable of feeding a dopant quantitatively and stably. The dopant concentration of the molten silicon is estimated by reference to the weight of the growing silicon single crystal or the weight of silicon starting material fed to the apparatus, in order predictively to compute the time and amount of addition of dopant (10). Dopant in the form of unit dopant chips are continuously or intermittently fed by a dopant feeder (9) including a cylinder (91), a piston (92) and a piston actuator (93).