Semiconductor device enhanced for optical interaction.

摘要

A semiconductor device is disclosed in which a long interaction path length is provided for a non-invasive probe beam. In a preferred embodiment, mirror surfaces (24, 26) are etched in the surface of the semiconductor substrate (10 min ) which are used to reflect the probe beam along the longest dimension of a charge carrier region (14 min ) of the semiconductor device. Interaction between the probe beam and the charge carriers present in the region is thereby enhanced.