| 摘要 |
PURPOSE:To enhance precision of a resist pattern by transferring the resist pattern of an upper resist layer to a lower resist layer by using the upper pattern as a mask and correcting a cross section in an overhanging state due to side etching at the end of the lower resist pattern. CONSTITUTION:The resist pattern forming process comprises a first step of using as a mask the upper layer resist pattern and transferring the upper resist pattern to the lower resist layer, a second step of coating a base plate with a positive type resist 4, and a third step of using the upper resist pattern 3a as a mask and exposing the positive type resist 4 and then developing it. When the positive type resist 4 present at the side etched part of the end of the lower resist pattern 2a is irradiated by DEEP UV rays, it is masked with the upper resist pattern 3a and is not subjected to photoreaction. When the resist 4 is developed, the resist 4 present in the side etched part is not dissolved and remains there, thus permitting the overhanging part at the end of the lower resist pattern 2a to be corrected, and a pattern 5 having a sharp cross section to be obtained. |
