| 摘要 |
<p>PURPOSE:To substantially increase a number of possible rewriting operations in an EEPROM having floating gate structure, by baking the EEPROM always after repeating a certain number of rewriting operations. CONSTITUTION:A floating-gate-type EEPROM assembled into a package is subjected to up to 10<5> rewriting operations by a conventional rewriting process. The EEPROM in the packaged state is then introduced into a baking furnace at a temperature higher than 200 deg.C and left therein for about 5 hours. The EEPROM is taken out of the furnace and subjected to 10<5> rewriting operations by an ordinary rewriting process. Then, the EEPROM is baked again. By repeating this cycle, a number of possible rewriting operations can be increased substantially.</p> |
