OPTICAL SEMICONDUCTOR IC,申请号JP19880153966-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	OPTICAL SEMICONDUCTOR IC
摘要
申请公布号	JPH023989(A)	申请公布日期	1990.01.09
申请号	JP19880153966	申请日期	1988.06.21
申请人	MITSUBISHI ELECTRIC CORP	发明人	MURAO FUMIHIDE;WATANABE FUMIHIRO
分类号	H01L27/14;H01L27/15;H01L31/02	主分类号	H01L27/14
代理机构		代理人
主权项
地址

您可能感兴趣的专利

PACKAGING MATERIAL FOR VACUUM HEAT INSULATING MATERIAL AND VACUUM HEAT INSULATING MATERIAL

RUST PREVENTION METHOD

INCIDENT-LIGHT ILLUMINATING DEVICE AND INVERTED MICROSCOPE

START OF BATTERY PACK FORM

COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SOLID OXIDE FUEL CELL

FUEL CELL SYSTEM, AND FUEL CELL SYSTEM EMERGENCY STOP METHOD

POLLEN MIXTURE FOR HAND POLLINATION

SPEED ESTIMATING DEVICE, SIGNAL PROCESSOR, COMPUTER PROGRAM, AND SPEED ESTIMATING METHOD

VOICE SYNTHESIS DEVICE

SOLAR BATTERY CURRENT COLLECTION SHEET MANUFACTURING METHOD

METHOD OF MANUFACTURING MEMBRANE ELECTRODE ASSEMBLY AND MEMBRANE ELECTRODE ASSEMBLY

RADIO COMMUNICATION SYSTEM, RADIO COMMUNICATION CONTROL METHOD, AND RADIO COMMUNICATION CONTROL PROGRAM

WASTE TREATMENT FACILITY

RADIO COMMUNICATION SYSTEM, RADIO COMMUNICATION DEVICE, AND RADIO COMMUNICATION METHOD

METHOD FOR PRODUCING GALLIUM NITRIDE, AND POLYCRYSTALLINE GALLIUM NITRIDE

METHOD FOR PRODUCING CONCRETE COMPOSITION

ELECTRONIC DEVICE, AND DIELECTRIC STRENGTH TEST METHOD FOR THE SAME

VERTICAL NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD OF THE SAME