Semiconductor laser device which has a double-hetero structure having an optimal layer thickness,申请号US19890323400-传众专利搜索

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发明名称	Semiconductor laser device which has a double-hetero structure having an optimal layer thickness
摘要
申请公布号	US4893313(A)	申请公布日期	1990.01.09
申请号	US19890323400	申请日期	1989.03.14
申请人	KABUSHIKI KAISHA TOSHIBA	发明人	HATAKOSHI, GENICHI;ITAYA, KAZUHIKO;NARITSUKA, SHIGEYA;ISHIKAWA, MASAYUKI;OKUDA, HAJIME;SHIOZAWA, HIDEO;WATANABE, YUKIO;OHBA, YASUO;KOKUBUN, YOSHIHIRO;UEMATSU, YUTAKA
分类号	H01S5/20;H01S5/223;H01S5/32;H01S5/323	主分类号	H01S5/20
代理机构		代理人
主权项
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