| 摘要 |
PURPOSE:To restrain the generation of peel segments caused by plasma, and enable the vapor growth of a superior single crystal silicon film by arranging a crystal silicon plate on an electrode surface of a cathode or an anode on the side where a substrate stand is not formed. CONSTITUTION:Reaction gas is introduced in a vacuum reaction chamber 11, and plasm discharge is generated in the vicinity of a substrate stand 13, by applying a high frequency voltage between both electrodes 12, 13. A single crystal silicon thin film is subjected to vapor growth on a substrate 1 arranged on the stand 13. When a crystal silicon plate is arranged on the surface of the cathode 12 which does not form the stand 13, deposit which is likely to be deposited on the cathode 12 by plasma discharge is deposited on the crystal silicon plate having good affinity. Said deposit hardly exfoliates from the crystal silicon plate, so that the generation of peel segments can be restrained. Thereby, the vapor growth of an excellent single crystal silicon thin film with no defects such as pin hole and the like on the substrate surface is enabled. |
