| 摘要 |
<p>PURPOSE:To obtain the appropriate thickness of a metallic thin film to electri cally connect with the bottom part of a contact hole excellently by introducing a metallic material in a gas state into a reaction chamber, and introducing excited reaction gas so that it is made to react to liquefied metallic material to form the metallic thin film. CONSTITUTION:A thin film transistor 5 is formed on a substrate 1 made of quartz and covered with an insulating film 2 made of silicon oxide, etc., where a contact hole 3 is made. The substrate 1 having the contact hole 3 is led in the reaction chamber 22 and cooled to a temperature equal to or below the liquefied temperature of the metallic material gas which is fixed based on the environmental pressure by a temperature adjusting unit 26. Next, the metal lic material in the gas state is introduced from a metallic material gas introduc tion port 28 and liquefied on the surface of the substrate 1, then the liquefied metallic material is condensed to be the level of a certain height. The excited reaction gas is introduced from a reaction gas introduction port 32 and made to react to the metallic material. Thus, the contact hole can be embedded with out unnecessarily making the thickness of wiring metal thick, thereby forming the metallic wiring of appropriate thickness.</p> |
