| 摘要 |
PURPOSE:To obtain a vertical MOSFET freed of parasitic bipolar effect, by providing a source electrode of a metal or silicide in a part of a channel region such that it is in ohmic junction with the channel region and in contact with a gate insulating film. CONSTITUTION:Instead of a conventional source region, a source electrode 11 formed of a metal or silicide is provided in direct contact with a gate oxide film 9. The electrode 11 is ohmically joined with a channel region 3 and a channel 10 produced in the channel region 3 is formed by electrons emitted directly from the source electrode 11. According to such construction in which the source region is not provided by an N<+> diffused layer, no parasitic effect is caused by the source and channel regions 3 or by the drain region 2. Accordingly, the MOSFET is allowed to exhibit its maximum performance. |
