发明名称 Low-inductance semiconductor apparatus
摘要 A low-inductance semiconductor apparatus has a flat-topped base which support a semiconductor element. A cathode whose height is roughly on the order of its diameter sits atop the semiconductor element. The cathode has a flat upper surface with a threaded hole formed in the center thereof into which a lead with a threaded end can be screwed. The inside of the semiconductor apparatus is sealed by a cap which is secured in an airtight manner to the cathode and to a casing which is secured to the top surface of the base. The base can be either flat-bottomed or studded.
申请公布号 US4893173(A) 申请公布日期 1990.01.09
申请号 US19880289441 申请日期 1988.12.22
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 OHDATE, MITUO
分类号 H01L23/049;H01L23/48 主分类号 H01L23/049
代理机构 代理人
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