| 摘要 |
PURPOSE:To obtain a resist having high sensitivity, high definition, and high resistance to influences during plasma processing by incorporating a specified alkali-soluble silicone polymer and a diazoketone type photosensitive material into a pattern forming compsn. CONSTITUTION:An alkali-soluble silicone polymer expressed by the formula I or II and a diazoketone type photosensitive material are incorporated into a pattern forming compsn. In the formulas I and II, X is a group expressed the formula III (wherein R is a hydrocarbon group, or a substituted hydrocarbon group); each R', R'', R''', R'<4>, and R'<5> is an OH group or an alkyl group, etc.; Y is an alkyl group, or a cycloalkyl group; each l, m, n, and q is zero or a positive number; p is a positive number. A silicone polymer having improved O2RIE (oxygen plasma etching resistance) by using such polysiloxane structure, and elevating Tg (glass transition point) by introducing many phenyl groups into its side chains, is used as a base polymer. Further, a diazoketone type compd. having high resistance to photo-discoloration is used as the photosensitive material. Thus, a pattern forming material having high sensitivity and high definition for high energy beams is obtd. |
