发明名称 DRIVING CIRCUIT FOR SEMICONDUCTOR SWITCHING DEVICE
摘要 PURPOSE:To obtain a satisfactory switching characteristic with high efficiency and without being affected by the ON-state duty of a control signal by correcting the quantity of charge/discharge of a capacitor corresponding to the ON-state duty of the control signal. CONSTITUTION:When a switching means SW1 is closed at the time of turning on a transistor Q1, the capacitor C1 is charged by a constant voltage source E in case of obtaining insufficient ON-state duty and charge on the capacitor C1, thereby the insufficient charge can be compensated. In such a way, it is possible to prevent switching speed from being delayed due to the reduction of the drawing of the sate charge of a FETQ3.
申请公布号 JPH022704(A) 申请公布日期 1990.01.08
申请号 JP19880148875 申请日期 1988.06.15
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 SHIOMI TSUTOMU;NAGASE HARUO;SATOMI AKIRA
分类号 H03K17/567;H03K17/56;H03K17/687;H03K17/691 主分类号 H03K17/567
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