发明名称 CHARGE PUMP CIRCUIT
摘要 PURPOSE:To operate the circuit at both high and low gain states by providing a high gain charge pump circuit employing a C-MOS analog switch and a low gain charge pump circuit employing a current switch circuit and switching the two charge pump circuits. CONSTITUTION:The high gain charge pump circuit 16H employs a C-MOS analog switch. Thus, in the high gain mode, the switching speed is high and the leakage current is small, then the output is very stable in the absence of the input. Moreover, the low gain charge pump circuit 16L uses a current switch comprising transistors TR1-TR4 and an NPN bipolar TR. Since the NPN TR has a large current driving force and the collector-base capacitance is small, the TR is controlled with high accuracy by a minute signal at a high frequency. Thus, the phase locking is obtained in an excellent way at both the high and low gain sides.
申请公布号 JPH022216(A) 申请公布日期 1990.01.08
申请号 JP19880146538 申请日期 1988.06.14
申请人 FUJITSU LTD 发明人 NISHIMORI EIJI;OTSU KATSUYOSHI
分类号 H03L7/093;H03L7/08 主分类号 H03L7/093
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