发明名称 HIGH VOLTAGE DETECTION CIRCUIT FOR SEMICONDUCTOR MEMORY
摘要 <p>PURPOSE:To obtain stable output without being affected by the fluctuation of power source potential by providing a FET having a high threshold voltage at an input side. CONSTITUTION:A P-MOSFET TR11 is always turned on, and an N-MOSFET TR12 is turned off when no input potential Vin exists, thereby, a TR13 is also turned off. Therefore, output potential Vout goes to an 'H'. Next, when the potential Vin increases, the potential of the gate G of the TR12 is increased, and the TR13 is also turned on according to the turning-on of the TR12, then, the potential Vout goes to an 'L'. And by setting the characteristics of the TR12 and the TR13 appropriately, the level of the Vout is inverted corresponding to that of the Vin, and the level of the Vin can be detected by lowering dependency on a Vcc.</p>
申请公布号 JPH022703(A) 申请公布日期 1990.01.08
申请号 JP19880150637 申请日期 1988.06.17
申请人 SHARP CORP 发明人 NAKAHARA KAZUNORI
分类号 G01R19/165;G11C11/407;G11C17/00;G11C17/18;H03K5/08;H03K17/30;H03K17/687;H03K19/094;H03K19/0944 主分类号 G01R19/165
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