| 摘要 |
PURPOSE:To improve the performance of a device by a method wherein a trapezoidal multi-layer structure is grown at a specified temperature on a substrate, on which a selection mask is located in advance, by an organic metal vapor growth method and a one-dimensional electronic state is made by continuous growth on the side face of the multi-layer structure by modulation doping for making a quantum wire. CONSTITUTION:SiO29 is deposited on a GaAs substrate by a sputtering method or a CVD method and a long stripe opening is formed in the [110] direction. After a non-dope AlGaAs 7 is deposited on this substrate at the temperature of 750 deg.C of below, for example, at 650 deg.C, in the thickness of 100nm by an organic metal vapor phase growth method, GaAs 3 and AlGaAs 2 are deposited in this order in the thickness of 10nm to make a multi-layer structure. Finally, an undoped AlGaAs 8 is deposited in the thickness of 100nm. At this time, the growth layer is in the shaped of a trapezoid and there is no deposition on the side face of it. Nextly, an undoped AlGaAs 4 is deposited on the trapezoidal multi-layer structure at 800 deg.C in the thickness of 10nm to make a one- dimensional electronic state on the side face of the trapezoid. |
