| 摘要 |
PURPOSE:To attain high speed operation and to attain the non-volatile holding of data by constituting a memory cell to be composed of an FF, which uses a floating gate type MOS TR for a driver. CONSTITUTION:When the drain of one Q1 out of a pair of floating gate type MOSTe Q1 and Q2 is in H and the drain of the other Q2 is in an L condition, the drain of the TR Q1 is closed to 15V by the boosting of a power source voltage and the drain of the TR Q2 goes to be much lower. As a result, in the Q4, electron discharge is executed from a floating gate to the drain and in the Q2, electron is discharged from the drain to the floating gate. Thus, the Q1 goes to the condition of large driving ability and the Q2 goes to the condition of the small ability. The non-volatile storage of this condition change is executed even after a power source is turned off. When the power source is inputted again, the TR Q1 is turned on at first by the difference of the driving ability for the TR Q2. Namely, the automatic initial set is executed to the drain of the Q1 to L and the drain of the Q2 to H. Such a condition is reverse to a condition before the power source is turned off. |
