| 摘要 |
PURPOSE:To provide a vapor phase development method and the resist which allows vapor phase development by using a resist consisting of a mixture composed of a polymer having double or triple bonds in the molecule and an additive having halogen and methane substd. with an arom. ring or the deriv. thereof as the molecule constituting elements. CONSTITUTION:The resist consisting of the mixture composed of the polymer having the double or triple bonds in the molecule and the additive having the halogen and the methane substd. with the arom. ring or the deriv. thereof as the molecule constituting elements is used. The vapor phase development method and the resist which allows the vapor phase development are obtd. in this way and the problem of swelling of the resist in the conventional development is solved. The formation of the fine patterns by electron beam and X-ray lithography is possible. |
