| 摘要 |
PURPOSE:To form a high speed and high density LSI composed of MOSFET of fine structure by arranging a wiring in a contact hole penetrating a source impurity diffusion layer and a drain impurity diffusion layer and reaching the inside of a semiconductor substrate. CONSTITUTION:A gate film 14, a gate electrode 13, and a source.drain diffusion layer 12 formed by ion implantation are formed on an Si semiconductor substrate. After an interlayer insulating film 15 is deposited, a contact hole is formed by patterning photoresist 16, and successively a trench is formed in a contact hole region of the Si semiconductor substrate. After organic solvent 17 containing impurity for diffusion is spread and buried in the contact hole and the trench of the semiconductor substrate, annealing of short time is performed by using a halogen lamp. Next, a diffusion layer 18 is formed. The organic solvent 17 and the resist 16 are eliminated, an Al wiring 19 is formed, and the contact hole and the trench of the semiconductor substrate are filled with Al. |
