发明名称 PROCEDE ET STRUCTURE DE PRISE DE CONTACT SUR DES PLOTS DE CIRCUIT INTEGRE.
摘要 Process for forming a contact in relief on an aluminium pin of an integrated circuit, comprising the following steps: providing a conductive polycrystalline silicon layer (23) beneath the aluminium pin (21); locally removing the aluminium layer so as to reveal part of the surface of the polycrystalline silicon layer; establishing a connection with the polycrystalline silicon layer by means of a drop of conductive adhesive (30). …<IMAGE>…
申请公布号 FR2618254(B1) 申请公布日期 1990.01.05
申请号 FR19870010413 申请日期 1987.07.16
申请人 THOMSON SEMICONDUCTEURS 发明人 JEAN-PIERRE GLOTON
分类号 H01L21/60;H01L23/485;H01L23/532 主分类号 H01L21/60
代理机构 代理人
主权项
地址