| 摘要 |
PURPOSE:To form a required pattern with good efficiency and to enhance its productivity by a method wherein an alignment mark is formed by being exposed together with a first pattern and a second pattern which is finer than the first pattern is drawn directly and formed by referring to the alignment mark. CONSTITUTION:A first pattern is exposed and formed together with an alignment mark 2 by using a photomask; a second pattern which is finer than the first pattern is drawn directly and formed by referring to the alignment mark by irradiation with a beam. That is to say, when a pattern to be formed by a collective exposure is substituted for one pattern of a pattern to be drawn directly by means of an electron beam or the like, a throughput can be increased by this operation only. In addition, when the pattern is drawn directly by referring to the alignment mark 2, the first pattern is formed simultaneously when the pattern of the alignment mark 2 is formed. Thereby, the fine pattern can be formed when it is drawn directly by using the beam; in addition, its productivity can be enhanced sufficiently. |
