| 摘要 |
PURPOSE:To enable a protective Zener diode for protection against surge to be produced within an element with good area efficiency, by composing the Zener diode of a base and a doped region formed adjacent to the base, the doped region having the conductivity type opposite to that of the base. CONSTITUTION:A doped region 13 of a first conductivity type having a concentration higher than that of a drain 7 is formed in a region joined to the drain 7 and located outside a channel forming region on the surface of a base 3, Thereby, a protecting diode consisting of a base 11 and the doped region 13 is produced. In this manner, the protective Zener diode can be produced with a desirable area efficiency, namely such Zener diode occupies little area. Accordingly, the semiconductor device is allowed to have still simpler construction and to operate stably with few erroneous operations such as latch-up due to a parasitic element. |
