| 摘要 |
PURPOSE:To execute the correction processing of fine circuit patterns by irradiating the work with ion beams as a wide scanning area, measuring secondary charge control particles, detecting the correction point, scanning said point as a narrow scanning area and correcting the same. CONSTITUTION:The high brightness ion beams 78 are drawn out of a liquid metal ion source 75 and are focused by electrostatic lenses 80-82. The spot 78' of the focusing ion beam 78 is scanned by deflecting electrodes 84, 85 over a wide scanning area. The secondary charge particles generated from a sample 74 having the fine circuit patterns are detected by a secondary charge particle detector 95 and the correction point is detected by the magnified SIM image obtd. by an SIM observing device 96. The scanning region of the focusing ion beam 78 is then limited by the deflecting electrodes 84, 85 and the defective position of the patterns is irradiated with the ion beam 78, by which the defect is corrected. The inspection is made by using the secondary electron image or secondary ion image formed by scanning of the ion beam 78 and the detect is corrected by the microion beam in such a manner, by which the defect of <=0.5mu patterns is inspected, removed and corrected. |
