| 摘要 |
<p>PURPOSE:To obtain a semiconductor device using a bipolar transistor by a method wherein, according to a base potential, a base current can be flowed in a reverse direction in addition to a base current in a forward direction. CONSTITUTION:An N<+> type buried layer 22, an epitaxial silicon layer 23, an N-type well 24 and a field oxide film 25 are formed on the surface of a P<-> type silicon substrate 21. A collector extraction layer 26, a P<-> type base region 27, an N<+> type emitter region 28, an emitter polycide 29 and a P<+> type layer 30 are formed at opening parts; in addition, an N<+> type layer 31 are piled up on the surface of the collector extraction layer 26. This whole assembly is covered with a silicon oxide film 32; a collector electrode, a base electrode and an emitter electrode 35, 36, 37 composed of Al-Si 34 are formed at contact openings via a Ti/TiN film 33. Accordingly, a reverse base current, between the collector and the base, which is larger than a forward base current can flow according to a change in a base potential. Thereby, it is possible to realize a transistor whose base current has a negative region in addition to a conventional positive region.</p> |
