| 摘要 |
PURPOSE:To inhibit increase of leaked current in the stationary state, by implanting doping ions in an amount as required for changing drain current in a subthreshold region by one figure. CONSTITUTION:Distribution characteristics of dopant concentration in a first region is obtained with respect to depth of the first region as observed when the amount of doping ions to be implanted in a channel is changed. Based on the distribution, swing is calculated from gate voltage-drain current characteristics. The amount of doping ions to be implanted in the channel is selected according to the dopant concentration in the first region such that the swing value is minimum or extremely small and such amount of ions are implanted in the channel section. In this manner, it is possible to minimize increase of the leaked current in the stationary state due to increase of cut-off current.
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