| 摘要 |
PURPOSE:To correct a pattern defect part and a pattern excess part with the same emitted light by correcting the pattern while varying the quantity of the emitted light. CONSTITUTION:Resist 6 is adhered to the whole photomask and the pattern excess part 3 is dosed with an electron beam 71 by an about 5X10<-5>C/cm<2> irradiation quantity to form the pattern. Then the pattern defect part 5 is irradiated by a 8X10<-3>C/cm<2> dosing quantity to obtain a blackened resist pattern 52. The blackened resist pattern 52 rises in temperature with the high energy of the electron beam 72 and it is considered that the carbon in the resist 6 remains, thereby obtaining a strong film. Thus, the pattern excess part 3 is formed and then etched away and the resist 6 is then removed. Consequently, the pattern defect is corrected extremely easily to shorten the process. |
