| 摘要 |
PURPOSE:To connect wiring for the alternation of part of an integrated circuit by depositing an insulator on another wire between desired wires and then depositing metal between the desired wires. CONSTITUTION:An Si compound Si(CH3)4 is blown onto a sample 3 from a nozzle 5 and oxygen is also blown from a nozzle 6. At this time, the periphery of the exit of the nozzle 6 is irradiated with an electron beam from an electron gun 8 so as to activate the oxygen. Then when a gallium converged ion beam irradiates from a converged ion beam device, the Si(CH3)4 which is blown from the nozzle 5 is adsorbed on the sample and irradiated with the converged ion beam to cause decomposition into Si and (CH3)4 and the activated oxygen is blown from the nozzle 6 at the same time, so the Si and oxygen react on each other to deposit SiO2 25 on a wire 23. When W(CO)6 is blown onto the sample from a nozzle 7 and irradiated with the converged ion beam to deposit W 26, thereby connecting wires 22 and 24. |
