| 摘要 |
PURPOSE:To allow the use of a mask for ion beam exposure and to enhance its mechanical strength and resistance to damage due to irradiation by using a single-crystal silicon carbide film as a support film to transmit an ion beam. CONSTITUTION:Single-crystal silicon carbide films 11 transmitting an ion beam by a channeling effect are grown epitaxially on a single-crystal substrate 10; then, a metal film shutting out the ion beam is formed selectively on one silicon carbide film; alternatively, the metal film is formed on the whole surface. This metal film is patterned; one part of the silicon carbide film is exposed; after that, the other silicon carbide film is etched and removed from the rear side so as to leave its peripheral part to be ring-shaped on the single-crystal substrate. Thereby, it is possible to increase the mechanical strength and resistance to damage by irradiation with the ion beam of a mask for ion beam exposure use utilizing the channeling effect. |
